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IRLMS6702 v dss = -20v r ds(on) = 0.20 ? hexfet ? power mosfet fifth generation hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet ? power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the micro6 ? package with its customized leadframe produces a hexfet ? power mosfet with r ds(on) 60% less than a similar size sot-23. this package is ideal for applications where printed circuit board space is at a premium. it's unique thermal design and r ds(on) reduction enables a current-handling increase of nearly 300% compared to the sot-23. !"# ! !$ % & '()* +,* "( - #.# !/#0*.1#.# 2*#,( 3%0( 4 top view 1 2 d g a d d d s 3 4 5 6 0 5 6332* 37 888 888 & www.irf.com 1 micro6 ? 2 www.irf.com ,* 9/#$ "( 888 888 : ? ? 9/#$ "( 3% ;;* 888 888 0; * 3 888 888 < 888 888 + =="#"( 888 888 : ( )$# *#** 888 888 , 888 888 < 888 888 < +,* )$# '/( 888 888 +,* 0. '/( 888 888 > "+=( 888 < > +,* =( 888 < < > +?@5""@a=( 888 ,)(<# b"1 3 888 888 0 3 888 888 < b;;"1 3 888 888 0 < ? )"" 3 888 888 0 < ?, ,)( %%** 888 888 b%%** 888 888 %) 0. ; %** 888 888 c5de,)( !"# : ? 0 ,*,*b0* ,*'/( ,* 5b,)f 137" ?9#1#a =$(= !"#,* (". ?9#1#a %g*## #)$#"( 888 888 < 0.0*.1 3 888 < > 0.0*.1=( 888 ## : $ % " 888 888 888 888 s d g 0%.(h%"$#="3#71 36g*3%?,;(a i sd < ## : !"$#= :h#1*1*" i ,;*3#)07# * www.irf.com 3 0.1 1 10 100 0.1 1 10 d ds 20s pulse width t = 25c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j -1.75v vgs top - 7.5v - 5.0v - 4.0v - 3.5v - 3.0v - 2.5v - 2.0v bottom -1.75v 0.1 1 10 100 0.1 1 10 d ds 20s pulse width t = 150c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j -1.75v vgs top - 7.5v - 5.0v - 4.0v - 3.5v - 3.0v - 2.5v - 2.0v bottom -1.75v 0.1 1 10 100 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 t = 25c t = 150c j j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) v = -10v 20s pulse width ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a i = -1.6a v = -4.5v d gs 4 www.irf.com !" #$% &$ &# $ # $ # '($ 0 100 200 300 400 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 10 0246810 g gs a -v , gate-to-source voltage (v) q , total gate charge (nc) i = -1.6a v = -16v for test circuit see figure 9 d ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1. 4 t = 25c t = 150c j j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) 0.1 1 10 100 1 10 100 operation in this area limited by r ds(on) t = 25c t = 150c single pulse a -i , drain current (a) -v , drain-to-source voltage (v) ds d a j 100s 1ms 10ms www.irf.com 5 #( $ )* #( $ + &$)* &$ 1 ! 0.1 % 0 0 j + - q g q gs q gd v g charge , v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f d.u.t. v d s i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - !" - * . /0 %1 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 6 www.irf.com p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - 0 ? #.#*""#710 ? *""#711)*@@ ? j .*j# *'1# ? '$,1#** ? +#!" ? '$'/(#** ;3 2 0.!"1;j ;!=" 2 k 22 34 222 ;'(*'."#..* for p-channel hexfet ? power mosfets www.irf.com 7 lead assignments recommended footprint dd dd s g 1 2 3 6 5 4 0 -10 o o 0.60 (.023 ) 0.10 (.004 ) 0.20 (.007 ) 0.09 (.004 ) 6x 1.30 (.051 ) 0.90 (.036 ) -c- 0.15 (.006 ) max. 1.45 (.057 ) 0.90 (.036 ) 6 surfaces 0.10 (.004 ) 0.50 (.019 ) 0.35 (.014 ) 6x 2x 0.95 ( .0375 ) 1.75 (.068 ) 1.50 (.060 ) -a- 3.00 (.118 ) 2.80 (.111 ) -b- 3.00 (.118 ) 2.60 (.103 ) 1 2 3 6 5 4 6x 0.65 (.025 ) 2.20 (.087 ) 6x (1.06 (.042 ) 2x 0.95 (.0375 ) n otes : 1 . dimensioning & tolerancing per ansi y14.5m-1982. 2 . controlling dimension : millimeter. 3 . dimensions are shown in millimeters (inches). 0.15 (.006 ) m c a s b s ! " ! # ! ! $% % $% & ' % % % %! % % % & $% % % &# % # %! ! " # ! ! $ % ! ! # ! & $ % note: a line above the work week (as shown here) indicates lead-free. 8 www.irf.com 8mm feed direction 4mm n otes : 1 . outline conforms to eia-481 & eia-541. 9.90 ( .390 ) 8.40 ( .331 ) 178.00 ( 7.008 ) max. notes: 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. !"# $% & ' (! #)*(!# &% +,' (! #)* ! - . . !/!" |
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